Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home Products3 Pin Transistor

BUK9237-55A 3 Pin Transistor N Channel MOS FET TrenchMOS logic level FET

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

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Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

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BUK9237-55A 3 Pin Transistor N Channel MOS FET TrenchMOS logic level FET

China BUK9237-55A 3 Pin Transistor N Channel MOS FET TrenchMOS logic level FET supplier

Large Image :  BUK9237-55A 3 Pin Transistor N Channel MOS FET TrenchMOS logic level FET

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: BUK9237-55A

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8100pcs
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Detailed Product Description
Drain-source Voltage: 55 V Drain-gate Voltage: 55 V
Gate-source Voltage: ±15 V Drain Current: 32 A
Total Power Dissipation: 77 W Package: SOT428 (D-PAK)
High Light:

npn smd transistor

,

multi emitter transistor

 

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BUK9237-55A TrenchMOS™ logic level FET

 

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

 

Product availability: BUK9237-55A in SOT428 (D-PAK).

 

Features

■ TrenchMOS™ technology

■ Q101 compliant

■ 175 °C rated

■ Logic level compatible.

 

Applications

■ Automotive and general purpose power switching:

  ◆ 12 V and 24 V loads

  ◆ Motors, lamps and solenoids.

 

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134)

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC)   - 55 V
VDGR drain-gate voltage (DC) RGS = 20 kΩ - 55 V
VGS gate-source voltage (DC)   - ±15 V
ID drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 - 32 A
Tmb = 100 °C; VGS = 5 V; Figure 2 - 22 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 129 A
Ptot total power dissipation Tmb = 25 °C; Figure 1 - 77 W
Tstg storage temperature   -55 +175 °C
Tj operating junction temperature   -55 +175 °C
Source-drain diode
IDR reverse drain current (DC) Tmb = 25 °C - 32 A
IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 129 A
Avalanche ruggedness
WDSS non-repetitive avalanche energy

unclamped inductive load; ID = 32 A; VDS ≤ 30 V;

VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C

- 76 mJ

 

BUK9237-55A 3 Pin Transistor N Channel MOS FET TrenchMOS logic level FETBUK9237-55A 3 Pin Transistor N Channel MOS FET TrenchMOS logic level FET

 

Package outline

Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads

(one lead cropped)                                                                                                  SOT428

BUK9237-55A 3 Pin Transistor N Channel MOS FET TrenchMOS logic level FET

BUK9237-55A 3 Pin Transistor N Channel MOS FET TrenchMOS logic level FET

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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