Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Home Products3 Pin Transistor

STK630F Transistor Electronics Components electronic Power MOSFET

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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STK630F Transistor Electronics Components electronic Power MOSFET

China STK630F Transistor Electronics Components electronic Power MOSFET supplier

Large Image :  STK630F Transistor Electronics Components electronic Power MOSFET

Product Details:

Place of Origin: Malaysia
Brand Name: STK
Certification: Original Factory Pack
Model Number: STK630F

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiation
Packaging Details: TUBE
Delivery Time: 1 Day
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5800PCS
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Detailed Product Description
Temperature Range: –55 To +150°C Payment Term: T/T, Paypal, Western Union
Voltage: ±30V Current: 5.7A
Package: TO-220F-3L Factory Package: TUBE
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multi emitter transistor

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silicon power transistors

IRFPE50 Transistor Electronics Components electronic Power MOSFET

 

Features

• Avalanche rugged technology.

• Low input capacitance.

• Low leakage current : 10 ㎂ (Max.) @ VDS=200V.

• Low RDS(on) : 0.30Ω(Typ.)

 

C.I MM74HC164MX FSC P0552AD/P9FAD SOP-14
DIODO BYG23M-E3/TR VISHAY 1632 SMA
DIODO SML4742A-E3/61 VISHAY 1632/12 SMA
DIODO BYG23M-E3/TR VISHAY 1632 SMA
DIODO SML4742A-E3/61 VISHAY 1632/12 SMA
RES 2010 330R 5% CRCW2010330RJNEF VISHAY 1612 SMD2010
RES 2010 68K 5% CRCW201068K0JNEF VISHAY 1612 SMD2010
C.I MCP6S26-I/SL MICROCHIP 16255C4 SOP-14
ACOPLADOR. PC817A SHARP 2016.08.10/H33 DIP-4
TRANS 2SS52M Honeywell 2SSM/523-LF TO-92
C.I SCC2691AC1D24 NXP 1149+ SOP-24
C.I TP3057WM TI XM33AF SOP-16
C.I CD14538BE TI 33ADS8K DIP-16
C.I CL2N8-G MICROCHIP CL2C SOT-89
C.I SN75179BP TI 57C50DM DIP-8
C.I L6219DS ST 135 SOP-24
CAP 1210 470PF 1KV NP0 CL32C471JIINNNE SAMSUNG AC7JO2H SMD1210
INDUTOR 3.3UH SLF6045T-3R3N2R8-3PF TDK YA16H0945122/3R3 SMD6045
CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SR PAN Y1628F843536/2.2/50V/SYK SMD4*5.4
C.I 24LC256-I/SN MICROCHIP 1636M6G SOP-8
CAP ELCO SMD 150UF 25V UCD1E151MNL1GS NICHICON 160602/150/25V/H72 SMD8*10.5
RES RC0805JR-0727RL YAGEO 1538 SMD0805
C.I SN75240PW TI 11/A75240 MSOP-8
RES RC0805JR-0715KL YAGEO 1637 SMD0805
CAP CER 0805 1UF 10V X7R LMK212BJ105MG-T TAIYOYUDEN 1608 SMD0805
CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNE SAMSUNG AC7JO2H SMD0805
RES 0805 28K7 RC0805FR-0728K7L 1% YAGEO 1638 SMD0805
RES 3K3 5% CASE 0805RC0805JR-073K3L YAGEO 1623 SMD0805
TRIAC BTA26-600BRG ST 628 TO-3P
CAP 0805 330NF 100V C2012X7S2A334K125AB TDK IB16F15763SD SMD0805

 

Descriptions

 

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

 

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.

 

The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

 

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain-source voltage VDSS 200 V

Gate-source voltage VGSS ±30 V

TC=25℃ 9 A Drain current (DC) * ID TC=100℃ 5.7 A

Drain current (Pulsed) * IDP 36 A

Drain power dissipation (TC=25℃) PD 30 W

Single pulsed avalanche energy ② EAS 162 mJ

Avalanche current (Repetitive) ① IAR 9 A

Repetitive avalanche energy ① EAR 7.2 mJ

Junction temperature TJ 150 °C

Storage temperature range Tstg -55~150 °C

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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