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IRFZ44NPBF Power Mosfet Transistor power mosfet ic electrical ic

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IRFZ44NPBF Power Mosfet Transistor power mosfet ic electrical ic

: Large Image : IRFZ44NPBF Power Mosfet Transistor power mosfet ic electrical ic

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRFZ44NPBF

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8700pcs

Contact Now

Detailed Product Description

Continuous Drain Current:	49 A	Pulsed Drain Current:	160 A
Power Dissipation:	94 W	Linear Derating Factor:	0.63 W/°C
Gate-to-Source Voltage:	± 20 V	Repetitive Avalanche Energy:	9.4 MJ
High Light:	npn smd transistor , multi emitter transistor

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

STU404D	5000	SAMHOP	15+	TO252
TB6560AHQ	5000	TOSHIBA	16+	ZIP
TC4001BP	5000	TOSHIBA	16+	DIP-14
TCA785	5000	INFINECN	14+	DIP
TCN75AVOA	5000	MICROCHIP	14+	SOIC-8
TCN75AVOA713	5000	MICROCHIP	14+	SOP8
TDA1524A	5000	NXP	16+	DIP
TL072CP	5000	TI	16+	DIP8
TLP127	5000	TOSHIBA	13+	SOP
TLP620-4	5000	TOSHIBA	15+	DIP
TOP244YN	5000	POWER	16+	TO-220
TS274CDT	5000	ST	16+	SOP-14
TS924AIDT	5000	ST	14+	SOP-14
UC3844BD ST	5000	ST	14+	SOP8
UDA1341TS	5000	NXP	14+	SSOP28
VIPER22A	5000	ST	16+	DIP-8
VLF4012AT-4R7M1R1	5000	TDK	16+	SMD
PBSS5160T	5001	NXP	13+	SOT-23
PL2303	5001	PROLIFIC	15+	SSOP
NDT451AN	5002	FSC	16+	SOT223
MAX1681ESA	5008	MAXIM	16+	SOP8
HFJ11-2450E-L12	5009	HALOELECT	14+	RJ45
L6598	5010	ST	14+	SOP16
ZM4744A	5100	VISHAY	14+	LL41
HCNW136	5101	AVAGO	16+	DIP8
CQ1565RT	5111	FAIRCHILD	16+	TO-220
FZT758TA	5111	ZETEX	13+	SOT223
LM324DR	5111	TI	15+	SOP-14
TFA9842	5112	NXP	16+	ZIP
MAX483ESA	5117	MAXIM	16+	SOP-8

IRFZ44NPbF

HEXFET® Power MOSFET

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

V_DSS = 55V

R_DS(on) = 17.5mΩ

I_D = 49A

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	49	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	35	A
I_DM	Pulsed Drain Current	160	A
P_D @T_C = 25°C	Power Dissipation	94	W
	Linear Derating Factor	0.36	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
I_AR	Avalanche Current	25	A
E_AR	Repetitive Avalanche Energy	9.4	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)