G30N60HS 0A, 600V, UFS Series N-Channel IGBT high power mosfet transistors rf power mosfet transistors

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G30N60HS 0A, 600V, UFS Series N-Channel IGBT high power mosfet transistors rf power mosfet transistors

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49172.

Features

• 60A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . 90ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Typical Performance Curves