Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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| Junction Temperature: | –40 To 150 °C | Storage Temperature: | –40 To 125 °C |
|---|---|---|---|
| Collector-Emitter Voltage (G-E SHORT): | 1200 Volts | Gate-Emitter Voltage (C-E SHORT): | ±20 Volts |
| Peak Collector Current: | 200 A | Peak Emitter Current: | 200 A |
| Highlight: | thyristor diode module,low voltage power mosfet |
||
Stock Offer (Hot Sell)
| Part no. | Quantity | Brand | D/C | Package |
| RT9183HPS | 3420 | RICHTEK | 15+ | SOP8 |
| AT24C32 DIP | 3422 | ATMEL | 16+ | SOP-8 |
| LA78040B | 3422 | SANYO | 16+ | TO-220 |
| CD40193BE | 3452 | TI | 14+ | DIP |
| STP60NS04Z | 3490 | ST | 14+ | TO-220 |
| 1N80 | 3500 | ST | 14+ | TO-92 |
| 74HC00D | 3500 | NXP | 16+ | SOP |
| AD9889BBCPZ-165 | 3500 | AD | 16+ | LFCSP64 |
| AP4835GM | 3500 | APEC | 13+ | SOP-8 |
| C106MG | 3500 | ON | 15+ | TO-126 |
| DO5022P-683MLD | 3500 | COILCRAFT | 16+ | SMD |
| LM317AEMP | 3500 | NS | 16+ | SOT223 |
| M4 | 3500 | TOSHIBA | 14+ | SMA |
| MX25L3206EM2I-12G | 3500 | MXIC | 14+ | SOP-8 |
| SMBJ170A | 3500 | VISHAY | 14+ | DO-214AA |
| SMLVT3V3 | 3500 | ST | 16+ | SMB |
| SST310 | 3500 | VISHAY | 16+ | SOT-23 |
| STM32F101C8T6 | 3500 | ST | 13+ | LQFP48 |
| 2PB710AS | 3512 | NXP | 15+ | SOT-23 |
| IRF5305PBF | 3512 | IR | 16+ | TO-220 |
| MIC2774N-29BM5 | 3512 | MIC | 16+ | SOT23-5 |
| LT1085CT-5 | 3520 | LT | 14+ | TO-220 |
| RTL8201BL 1111+ | 3520 | REALTEK | 14+ | QFP48 |
| TMDS351PAGR | 3520 | TI | 14+ | TQFP64 |
| LM339 TI DIP | 3540 | TI | 16+ | DIP |
| LM22675MRE-5.0 | 3555 | TI | 16+ | SOP-8 |
| MAX3485EESA | 3572 | MAXIM | 13+ | SOP-8 |
| MAX2606EUT | 3580 | MAXIM | 15+ | SOT23-6 |
| SN74HC4066N | 3580 | TI | 16+ | DIP14 |
| TL074CDR | 3580 | TI | 16+ | SOP-14 |
MITSUBISHI IGBT MODULES CM100DY-24H
HIGH POWER SWITCHING USE INSULATED TYPE
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features: ![]()
Applications:
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
| Ratings | Symbol | CM100DY-24H | Units |
| Junction Temperature | Tj | –40 to 150 | °C |
| Storage Temperature | Tstg | –40 to 125 | °C |
| Collector-Emitter Voltage (G-E SHORT) | VCES | 1200 | Volts |
| Gate-Emitter Voltage (C-E SHORT) | VGES | ±20 | Volts |
| Collector Current (TC = 25°C) | IC | 100 | Amperes |
| Peak Collector Current | ICM | 200* | Amperes |
| Emitter Current** (TC = 25°C) | IE | 100 | Amperes |
| Peak Emitter Current** | IEM | 200* | Amperes |
| Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) | Pc | 780 | Watts |
| Mounting Torque, M5 Main Terminal | - | 1.47 ~ 1.96 | N · m |
| Mounting Torque, M6 Mounting | - | 1.96 ~ 2.94 | N · m |
| Weight | - | 270 | Grams |
| Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) | Viso | 2500 | Vrms |
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Outline Drawing and Circuit Diagram
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