Anterwell Technology Ltd.

          Anterwell Technology Ltd.


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Home ProductsMosfet Power Module

Low Voltage Mosfet Power Module

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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Low Voltage Mosfet Power Module

China Low Voltage Mosfet Power Module supplier

Large Image :  Low Voltage Mosfet Power Module

Product Details:

Place of Origin: Germany
Brand Name: MOTOROLA
Certification: Original Factory Pack
Model Number: MHL18336

Payment & Shipping Terms:

Minimum Order Quantity: 5pcs
Price: Negotiation
Packaging Details: please contact me for details
Delivery Time: 1 Day
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 285PCS
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Detailed Product Description
Feature: Third Order Intercept: 46 DBm Typ Feature2: Power Gain: 30 DB Typ (@ F =1850 MHz)
Feature3: Excellent Phase Linearity And Group Delay Characteristics Feature4: Ideal For Feedforward Base Station Applications
Storage Temperature Range: –40 To +100 °C Voltage: 30V
High Light:

thyristor diode module


low voltage power mosfet




   Designed for ultra–linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA.



• Third Order Intercept: 46 dBm Typ

• Power Gain: 30 dB Typ (@ f =1850 MHz)

• Excellent Phase Linearity and Group Delay Characteristics

• Ideal for Feedforward Base Station Applications


Low Voltage Mosfet Power ModuleLow Voltage Mosfet Power Module

Rating Symbol  Value Unit
DC Supply Voltage VDD 30 Vdc
RF Input Power Pin +10 dBm
Storage Temperature Range Tstg –40 to +100 °C





Characteristic Symbol  Min  Typ  Max  Unit
Supply  Current IDD  —  500  525 

Power Gain

(f =1850 MHz)

Gp 29 30 31 dB

Gain Flatness

(f = 1800–1900 MHz)

GF 0.2 0.4 dB

Power Output @ 1 dB Comp.

(f = 1850 MHz)

Pout 1 dB 35 36 dBm

Input VSWR

(f = 1800–1900 MHz)

VSWRin 1.2:1  1.5:1  

Third Order Intercept

(f1 = 1847 MHz, f2 = 1852 MHz)

ITO 45 46 dBm

Noise Figure

(f = 1850 MHz)

NF 4.2 4.5 dB




Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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