MJF122G COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W high voltage power mosfet dual power mosfet

Complementary Power Darlingtons

For Isolated Package Applications

Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

Features

• Electrically Similar to the Popular TIP122 and TIP127

• 100 VCEO(sus)

• 5.0 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High DC Current Gain − 2000 (Min) @ IC = 3 Adc

• UL Recognized, File #E69369, to 3500 VRMS Isolation

• Pb−Free Packages are Available*

Thermal Response

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

    The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.

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