Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

China IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET supplier

Large Image :  IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: IRFBC30

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8500pcs
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Detailed Product Description
Drain-source Voltage (VGS = 0): 600 V Gate-source Voltage: ± 20 V
Drain Current (pulsed): 14 A Peak Diode Recovery Voltage Slope: 3 V/ns
Storage Temperature: -65 To 150 ℃ Max. Operating Junction Temperature: 150 ℃
High Light:

npn smd transistor

,

multi emitter transistor

 

IRFBC30

N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET

 

TYPE VDSS RDS(on) ID
IRFBC30 600 V < 2.2 Ω 3.6 A

IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET                 TO-220

 

 

■ TYPICAL RDS(on) = 1.8 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

 

DESCRIPTION

The PowerMESHTM ΙΙ is the evolution of the first generation of MESH OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.

 

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER

 

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain- gate Voltage (RGS = 20 kΩ) 600 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 ℃ 3.6 A
ID Drain Current (continuous) at Tc = 100 ℃ 2.3 A
IDM (•) Drain Current (pulsed) 14 A
Ptot Total Dissipation at Tc = 25 ℃ 75 W
  Derating Factor 0.6 W/℃
dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150

(•) Pulse width limited by safe operating area

( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

 

INTERNAL SCHEMATIC DIAGRAM

IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

 

TO-220 MECHANICAL DATA

IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

 

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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