Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

China IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs supplier

Large Image :  IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: IRF9540

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8600pcs
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Detailed Product Description
Drain To Source Voltage: -100 V Drain To Gate Voltage (RGS = 20kΩ): -100 V
Continuous Drain Current: -19 A Pulsed Drain Current: -76 A
Maximum Power Dissipation: 150 W Operating And Storage Temperature: -55 To 175 ℃
High Light:

npn smd transistor

,

multi emitter transistor

 

IRF9540, RF1S9540SM

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

 

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly Developmental Type TA17521.

 

Features

• 19A, 100V

• rDS(ON) = 0.200Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

 

Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified

PARAMETER SYMBOL IRF9540, RF1S9540SM UNITS
Drain to Source Voltage (Note 1)  VDS -100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) VDGR -100 V

Continuous Drain Current

TC = 100℃

ID

-19

-12

A

A

Pulsed Drain Current (Note 3) IDM -76 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation (Figure 1) PD 150 W
Linear Derating Factor (Figure 1)   1 W/℃
Single Pulse Avalanche Energy Rating (Note 4) EAS 960 mJ
Operating and Storage Temperature TJ, TSTG -55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief 334

 

TL

Tpkg

 

300

260

 

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. TJ = 25℃ to 150℃.

 

Symbol

IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

Packaging

                         JEDEC TO-220AB                                                    JEDEC TO-263AB

IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

Test Circuits and Waveforms

IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

 

 

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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