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APM2509N high power mosfet transistors Power Mosfet Transistor N-Channel Enhancement Mode MOSFET

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APM2509N high power mosfet transistors Power Mosfet Transistor N-Channel Enhancement Mode MOSFET

: Large Image : APM2509N high power mosfet transistors Power Mosfet Transistor N-Channel Enhancement Mode MOSFET

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	APM2509N

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8600pcs

Contact Now

Detailed Product Description

Drain-Source Voltage:	25 V	Gate-Source Voltage:	±20 V
Maximum Junction Temperature:	150 °C	Storage Temperature Range:	-55 To 150 °C
Diode Continuous Forward Current (TC=25°C):	30 A	Package:	TO-252
High Light:	multi emitter transistor , silicon power transistors

N-Channel Enhancement Mode MOSFET

Features
· 25V/50A ,
R_DS(ON) =7.5mW(typ.) @ V_GS =10V
R_DS(ON) =13mW(typ.) @ V_GS =4.5V
· Super High Dense Cell Design
· Avalanche Rated
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)

Applications
· Power Management in Desktop Computer or DC/DC Converters

Absolute Maximum Ratings

Symbol	Parameter		Rating	Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS	Drain-Source Voltage		25	V
V_GSS	Gate-Source Voltage		±20	V
T_J	Maximum Junction Temperature		150	°C
T_STG	Storage Temperature Range		-55 to 150	°C
I_S	Diode Continuous Forward Current	TC=25°C	30	A
Mounted on Large Heat Sink
I_DP	300µs Pulse Drain Current Tested	TC=25°C	100	A
I_DP	300µs Pulse Drain Current Tested	TC=100°C	65	A
I_D	Continuous Drain Current	TC=25°C	50*	A
I_D	Continuous Drain Current	TC=100°C	38	A
P_D	Maximum Power Dissipation	TC=25°C	50	W
P_D	Maximum Power Dissipation	TC=100°C	20	W
R_θJC	Thermal Resistance-Junction to Case		2.5	°C/W
Mounted on PCB of 1in² Pad Area
I_DP	300µs Pulse Drain Current Tested	TA=25°C	100	A
I_DP	300µs Pulse Drain Current Tested	TA=100°C	65	A
I_D	Continuous Drain Current	TA=25°C	13	A
I_D	Continuous Drain Current	TA=100°C	8	A
P_D	Maximum Power Dissipation	TA=25°C	2.5	W
P_D	Maximum Power Dissipation	TA=100°C	1	W
R_θJA	Thermal Resistance-Junction to Ambient		50	°C/W
Mounted on PCB of Minimum Footprint
I_DP	300µs Pulse Drain Current Tested	TA=25°C	100	A
I_DP	300µs Pulse Drain Current Tested	TA=100°C	65	A
I_D	Continuous Drain Current	TA=25°C	10.5	A
I_D	Continuous Drain Current	TA=100°C	6	A
P_D	Maximum Power Dissipation	TA=25°C	1.6	W
P_D	Maximum Power Dissipation	TA=100°C	0.6	W
R_θJA	Thermal Resistance-Junction to Ambient		75	°C/W

Note: * Current limited by bond wire.

Pin Description
APM2509N high power mosfet transistors Power Mosfet Transistor N-Channel Enhancement Mode MOSFET
Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

Packaging Information
TO-252( Reference JEDEC Registration TO-252)

Stock Offer (Hot Sell)

Part NO.

Q'ty

MFG

D/C

Package

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