Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Home Products3 Pin Transistor

SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor

China SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor supplier

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Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: SPA04N60C3

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8700pcs
Detailed Product Description
Drain-source Breakdown Voltage: 600 V Drain-Source Avalanche Breakdown Voltage: 700 V
Gate Threshold Voltage: 3 V Zero Gate Voltage Drain Current (Tj =25°C): 0.5 µA
Gate-source Leakage Current: 100 NA Gate Input Resistance: 0.95 Ω
High Light:

npn smd transistor

,

silicon power transistors

 
SPP04N60C3, SPB04N60C3
Final data SPA04N60C3
 
Cool MOSô Power Transistor
 

VDS @ Tjmax650V
RDS(on)0.95
ID4.5A

Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
 
  P-TO220-3-31          P-TO263-3-2           P-TO220-3-1
SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor
 
Maximum Ratings

ParameterSymbolValueUnit
SPP_BSPA

Continuous drain current

TC = 25 °C

TC = 100 °C

ID

 

4.5

2.8

 

4.51)

2.81)

A
Pulsed drain current, tp limited by TjmaxID puls13.513.5A
Avalanche energy, single pulse ID=3.4, VDD=50VEAS130130mJ
Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50VEAR0.40.4mJ
Avalanche current, repetitive tAR limited by TjmaxIAR4.54.5A
Gate source voltage staticVGS±20±20V
Gate source voltage AC (f >1Hz)VGS±30±30 
Power dissipation, TC = 25°CPtot5031W
Operating and storage temperatureTj , Tstg-55...+150°C

Drain Source voltage slope
VDS = 480 V, ID = 4.5 A, Tj = 125 °C

dv/dt50V/ns

 
P-TO-220-3-1
SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor
 
P-TO-263-3-2 (D2-PAK)
SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor
 
P-TO-220-3-31 (FullPAK)
SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor
 
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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-23616356

Fax: 86-755-23617396

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