Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
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Drain-source Breakdown Voltage: | 600 V | Drain-Source Avalanche Breakdown Voltage: | 700 V |
---|---|---|---|
Gate Threshold Voltage: | 3 V | Zero Gate Voltage Drain Current (Tj =25°C): | 0.5 µA |
Gate-source Leakage Current: | 100 NA | Gate Input Resistance: | 0.95 Ω |
High Light: | npn smd transistor,silicon power transistors |
SPP04N60C3, SPB04N60C3
Final data SPA04N60C3
Cool MOSô Power Transistor
VDS @ Tjmax | 650 | V |
RDS(on) | 0.95 | Ω |
ID | 4.5 | A |
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31 P-TO263-3-2 P-TO220-3-1
Maximum Ratings
Parameter | Symbol | Value | Unit | |
SPP_B | SPA | |||
Continuous drain current TC = 25 °C TC = 100 °C | ID |
4.5 2.8 |
4.51) 2.81) | A |
Pulsed drain current, tp limited by Tjmax | ID puls | 13.5 | 13.5 | A |
Avalanche energy, single pulse ID=3.4, VDD=50V | EAS | 130 | 130 | mJ |
Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50V | EAR | 0.4 | 0.4 | mJ |
Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | 4.5 | A |
Gate source voltage static | VGS | ±20 | ±20 | V |
Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
Power dissipation, TC = 25°C | Ptot | 50 | 31 | W |
Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
Drain Source voltage slope | dv/dt | 50 | V/ns |
P-TO-220-3-1
P-TO-263-3-2 (D2-PAK)
P-TO-220-3-31 (FullPAK)
Stock Offer (Hot Sell)
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