Anterwell Technology Ltd.

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IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET

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IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET

China IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET supplier

Large Image :  IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: IRFB31N20DPBF

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8100pcs
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Detailed Product Description
Continuous Drain Current, VGS @ 10V: 21 A Pulsed Drain Current: 124 A
Linear Derating Factor: 1.3 W/°C Gate-to-Source Voltage: ± 30 V
Peak Diode Recovery Dv/dt: 2.1 V/ns
High Light:

multi emitter transistor

,

silicon power transistors

 

HEXFET Power MOSFET

 

VDSS RDS(on) max ID
200V 0.082Ω 31A

 

Applications

  • High Frequency DC-DC converters 
  • Lead-Free

Benefits

  • Low Gate to Drain to Reduce Switching Losses 
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) 
  • Fully Characterized Avalanche Voltage and Current

IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET

 

Absolute Maximum Ratings

  Parameter Max. Unit
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31‡ A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A
IDM Pulsed Drain Current  124 A
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt ƒ 2.1 V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

 -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

 

 

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Tag:

n channel mos fet,

multi emitter transistor,

silicon power transistors

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

Send your inquiry directly to us (0 / 3000)

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