Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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IRF1010NBPF power mosfet ic Power Mosfet Transistor Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

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I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

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Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

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IRF1010NBPF power mosfet ic Power Mosfet Transistor Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

China IRF1010NBPF power mosfet ic Power Mosfet Transistor Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A) supplier

Large Image :  IRF1010NBPF power mosfet ic Power Mosfet Transistor Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: IRF1010NBPF

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8600pcs
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Detailed Product Description
Continuous Drain Current, VGS @ 10V: 60 A Pulsed Drain Current: 290 A
Power Dissipation: 180 W Linear Derating Factor: 1.2 W/°C
Gate-to-Source Voltage: ± 20 V
High Light:

npn smd transistor

,

multi emitter transistor

 

IRF1010N

HEXFET® Power MOSFET

 

  • Advanced Process Technology IRF1010NBPF power mosfet ic Power Mosfet Transistor Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

IRF1010NBPF power mosfet ic Power Mosfet Transistor Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

 

Absolute Maximum Ratings

  Parameter Max. Unit
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85‡ A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A
IDM Pulsed Drain Current  290 A
PD @TC = 25°C Power Dissipation 180 W
  Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy 18 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 3.6 V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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