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2SK3569 Silicon Power Transistors N Channel MOS Type Switching Regulator Applications

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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2SK3569 Silicon Power Transistors N Channel MOS Type Switching Regulator Applications

China 2SK3569 Silicon Power Transistors N Channel MOS Type Switching Regulator Applications supplier

Large Image :  2SK3569 Silicon Power Transistors N Channel MOS Type Switching Regulator Applications

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: 2SK3569

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 7800pcs
Detailed Product Description
Weight: 1.7 G (typ.) Drain-source Voltage: 600 V
Drain Power Dissipation (Tc = 25°C): 45 W Single Pulse Avalanche Energy: 363 MJ
Avalanche Current: 10 A Channel Temperature: 150 °C
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2SK3569 Silicon Power Transistors N Channel MOS Type Switching Regulator Applications

 

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3569

 
Switching Regulator Applications
 
• Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
 
Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

600

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

600

V

Gate-source voltage

VGSS

±30

V

Drain current

DC (Note 1)

ID

10

A

Pulse (t = 1 ms) (Note 1)

IDP

40

A

Drain power dissipation (Tc = 25°C)

PD

45

W

Single pulse avalanche energy (Note 2)

EAS

363

mJ

Avalanche current

IAR

10

A

Repetitive avalanche energy (Note 3)

EAR

4.5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
 
Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.78

°C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

°C/W

Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
 
2SK3569 Silicon Power Transistors N Channel MOS Type Switching Regulator Applications   2SK3569 Silicon Power Transistors N Channel MOS Type Switching Regulator Applications
 
 
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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-23616356

Fax: 86-755-23617396

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