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IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

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IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

: Large Image : IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

Product Details:

Place of Origin:	Original
Brand Name:	IRF
Certification:	Original Factory Pack
Model Number:	IRFI4020H-117P

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

VDS:	200 V	RDS(ON) Typ. @ 10V:	80 M
Qg Typ.:	19 NC	Qsw Typ:	6.8 NC
RG(int) Typ.:	3.0 Ω
High Light:	npn smd transistor , multi emitter transistor

IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V Features

► Integrated half-bridge package

► Reduces the part count by half

► Facilitates better PCB layout

► Key parameters optimized for Class-D audio amplifier applications

► Low RDS(ON) for improved efficiency

► Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI

► Can delivery up to 300W per channel into 8Ω load in half-bridge configuration amplifier

► Lead-free package

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

	Parameter	Max	Units
VDS	Drain-to-Source Voltage	200	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	9.1	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	5.1	A