Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
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Low Drain–source ON Resistance: | RDS (ON) = 3.7 Ω (typ.) | High Forward Transfer Admittance: | |Yfs| = 2.6 S (typ.) |
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Low Leakage Current: | IDSS = 100 μA (max) (VDS = 720 V) | Enhancement Mode: | Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 MA) |
Drain–source Voltage: | 900 V | Drain–gate Voltage (RGS = 20 KΩ): | 900 V |
High Light: | npn smd transistor,silicon power transistors |
Chopper Regulator, DC–DC Converter and Motor Drive Applications
• Low drain–source ON resistance : RDS (ON) = 3.7 Ω (typ.)
• High forward transfer admittance : |Yfs| = 2.6 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Thermal Characteristics
Characteristics | Symbol | Max | Unit |
Thermal resistance, channel to case | Rth (ch–c) | 3.125 | °C / W |
Thermal resistance, channel to ambient | Rth (ch–a) | 62.5 | °C / W |
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 60.0 mH, RG = 25 Ω, IAR = 3 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
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