New & Original Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683

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: Large Image : New & Original Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

Drain-Source Voltage:	500 V	Continuous Drain Current:	±19 A
Pulsed Drain Current:	±76 A	Gate-Source Voltage:	±30 V
Repetitive And Non-Repetitive Maximum Avalanche Current:	19 A	Maximum Drain-Source DV/dt:	20 KV/us
Operating Temperature:	150℃	Storage ℃ Temperature Range:	-55 ～ +150℃
High Light:	multi emitter transistor , silicon power transistors

Fuji Power MOSFET SuperFAP-G series Target Specification

2SK3683-01MR (500V/0.38Ω/19A)

1) Package TO-220F15R

2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

Characteristics	Symbol	Rating	Unit
Drain−source voltage	V_DS	500	V
Continuous Drain Current	I_D	±19	A
Pulsed Drain Current	I_D(pulse)	±76	A
Gate-Source Voltage	V_GS	±30	V
Repetitive and Non-Repetitive Maximum Avalanche Current	I_AR	19	A
Non-Repetitive Maximum Avalanche Energy	E_AS	245.3	mJ *1
Maximum Drain-Source dV/dt	dV_DS/dt	20	kV/us
Peak Diode recovery dV/dt	dV/dt	5	kV/us *2
Maximum Power Dissipation	P_D ＠Ｔc=25℃	95	W
Maximum Power Dissipation	P_D @Ta=25℃	2.16	W
Operating and Storage Temperature range	T_ch	150	℃
Operating and Storage Temperature range	T_stg	-55 ～ +150	℃