Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain−source Voltage: | 900 V | Drain−gate Voltage (RGS = 20 KΩ): | 900 V |
|---|---|---|---|
| Gate−source Voltage: | ±30 V | Drain Power Dissipation (Tc = 25°C): | 150 W |
| Single Pulse Avalanche Energy: | 663 MJ | Avalanche Current: | 9 A |
| Channel Temperature: | 150 °C | Storage Temperature Range: | −55~150 °C |
| High Light: | npn smd transistor,silicon power transistors |
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TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (π−MOSIII) 2SK2611
DC−DC Converter, Relay Drive and Motor Drive Applications
* Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)
* High forward transfer admittance : |Yfs| = 7.0 S (typ.)
* Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
* Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Weight: 4.6 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit | |
| Drain−source voltage | VDSS | 900 | V | |
| Drain−gate voltage (RGS = 20 kΩ) | VDGR | 900 | V | |
| Gate−source voltage | VGSS | ±30 | V | |
| Drain current | DC (Note 1) | ID | 9 | A |
| Pulse (Note 1) | IDP | 27 | A | |
| Drain power dissipation (Tc = 25°C) | PD | 150 | W | |
| Single pulse avalanche energy (Note 2) | EAS | 663 | mJ | |
| Avalanche current | IAR | 9 | A | |
| Repetitive avalanche energy (Note 3) | EAR | 15 | mJ | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | −55~150 | °C | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
| Characteristics | Symbol | Max | Unit |
| Thermal resistance, channel to case | Rth (ch−c) | 0.833 | °C / W |
| Thermal resistance, channel to ambient | Rth (ch−a) | 50 | °C / W |
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
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