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NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

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NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

: Large Image : NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

Product Details:

Place of Origin:	Original
Brand Name:	FAIRCHILD
Certification:	Original Factory Pack
Model Number:	2SC5200

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

High Current Capability::	IC = 15A.	High Power Dissipation ::	150watts.
High Frequency:	30MHz	High Voltage:	VCEO=230V
Collector-Base Voltage:	230 V
High Light:	npn smd transistor , multi emitter transistor

2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

Applications NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO3P package, 2SC5242/FJA4313 : 130 watts

-- TO220 package, FJP5200 : 80 watts

-- TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol	Parameter	Ratings	Units
BV_CBO 230 V	BVCBO Collector-Base Voltage	230	V
BV_CEO	Collector-Emitter Voltage	230	V
BV_EBO	BVEBO Emitter-Base Voltage 5 V	5	V
I_C	Collector Current(DC)	15	A
I_B	Base Current	1.5	A
P_D	Total Device Dissipation(TC=25°C) Derate above 25°C	150 1.04	W W/°C
T_J, T_STG	Junction and Storage Temperature	- 50 ~ +150	°C