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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

: Large Image : NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2SC1972

Payment & Shipping Terms:

Minimum Order Quantity:	20
Price:	Negotiation
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8000

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Detailed Product Description

High Power Gain:	Gpe>=7.5dB @Vcc=13.5V, Po=14W, F=175MHz	Package:	TO-220
High Light:	multi emitter transistor , silicon power transistors

High Power Gain:

Gpe>=7.5dB @Vcc=13.5V, Po=14W, F=175MHz

Package:

TO-220

High Light:

multi emitter transistor

silicon power transistors

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

DESCRIPTION:

The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.

FEATURES INCLUDE:

• Replaces Original 2SC1972 in Most Applications

• High Gain Reduces Drive Requirements

• Economical TO-220 Package

**MAXIMUM RATINGS**
I_C	3.5 A
V_CBO	35 V
P_DISS	25 W @ TC = 25 °C
T_STG	-55 °C to +175 °C
θ_JC	6.0 °C/W

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

**CHARACTERISTICS** TC = 25 °C
SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNITS
BV_CEO	I_C = 50 mA	17			V
BV_CBO	I_C = 10 mA	35			V
BV_EBO	I_C = 10 mA	4.0			V
I_CBO	V_CES = 25 V			100	µA
I_EBO	V_EB = 3.0 V			500	µA
h_FE	V_CE = 10 V I_C = 100 mA	10	50	180	---
η_C P_OUT	V_CC= 13.5 V P_IN = 2.5 W f =175 MHz	60 14	70 15		% W

Tag:

n channel mos fet,

multi emitter transistor,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-23616356

Fax: 86-755-23617396

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