Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

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Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

China Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038 supplier

Large Image :  Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: 2N6038

Payment & Shipping Terms:

Minimum Order Quantity: 20
Price: Negotiate
Packaging Details: please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 10000
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Detailed Product Description
Material: Plastic Package Collector−Base Voltage: 60
ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets: UL 94 V−0 @ 0.125 In
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Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

 

Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.

 

• High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc

• Collector–Emitter Sustaining Voltage — @ 100 mAdc

                                             VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc

                                              (Min) — 2N6036, 2N6039

• Forward Biased Second Breakdown Current Capability  IS/b = 1.5 Adc @ 25 Vdc

• Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication

• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package

 

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage 2N6034

                                         2N6035, 2N6038

                                         2N6036, 2N6039

  VCEO

  40

  60

  80

  Vdc

Collector−Base Voltage 2N6034

                                      2N6035, 2N6038

                                      2N6036, 2N6039

  VCBO

  40

  60

  80

  Vdc
Emitter−Base Voltage   VEBO   5.0   Vdc

Collector Current           Continuous

                                       Peak

  IC

  4.0

  8.0

  Adc

  Apk

Base Current   IB   100   mAdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

  PD

  40

  320

    W

  mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

  PD

  1.5

  12

    W

  mW/°C

Operating and Storage Junction Temperature Range   TJ, Tstg   –65 to +150   °C

 

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 3.12 °C/W
Thermal Resistance, Junction−to−Ambient RJA 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

 

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS        

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)                 2N6034                                                                                      2N6035, 2N6038                                                                        2N6036, 2N6039

  VCEO(sus)

  40

  60

  80

  --

  --

  --

  Vdc

Collector−Cutoff Current

(VCE = 40 Vdc, IB = 0)                   2N6034

(VCE = 60 Vdc, IB = 0)                   2N6035, 2N6038

(VCE = 80 Vdc, IB = 0)                   2N6036, 2N6039

  ICEO

  --

  -- 

  --

  100

  100

  100

  uA

Collector−Cutoff Current

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)       2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)       2N6035, 2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)       2N6036, 2N6039

(VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C)  2N6034

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C)  2N6035,                                                                                    2N6038

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C)  2N6036,                                                                                    2N6039 

  ICEX

  --

  -- 

  --

  --

  --

  --

  100

  100

  100

  500

  500

  500

  uA

Collector−Cutoff Current

(VCB = 40 Vdc, IE = 0)                     2N6034

(VCB = 60 Vdc, IE = 0)                     2N6035, 2N6038

(VCB = 80 Vdc, IE = 0)                     2N6036, 2N6039

  ICBO

  --

  --

  --

  0.5

  0.5

  0.5

  mAdc
Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)   IEBO   --   2.0   mAdc
ON CHARACTERISTICS        

DC Current Gain

     (IC = 0.5 Adc, VCE = 3.0 Vdc)

     (IC = 2.0 Adc, VCE = 3.0 Vdc)

     (IC = 4.0 Adc, VCE = 3.0 Vdc)

  hFE

  500

  750

  100

   --

  15,000

   --

  --

Collector−Emitter Saturation Voltage

     (IC = 2.0 Adc, IB = 8.0 mAdc)

     (IC = 4.0 Adc, IB = 40 mAdc)

  VCE(sat)

  --

  --

  2.0

  3.0

  Vdc

Base−Emitter Saturation Voltage

     (IC = 4.0 Adc, IB = 40 mAdc)

  VBE(sat)   --   4.0   Vdc

Base−Emitter On Voltage

     (IC = 2.0 Adc, VCE = 3.0 Vdc)

  VBE(on)   --   2.8   Vdc
DYNAMIC CHARACTERISTICS        

Small−Signal Current−Gain

     (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

  |hfe|   25   --   --

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)  2N6034, 2N6035, 2N6036                                                          2N6038, 2N6039

  Cob

  --

  --

  200

  100

  pF

*Indicates JEDEC Registered Data.

 

Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

 

 

Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

 

Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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