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600 V 3 Pin Transistor Socket BCR20KM-12L Medium Power Insulated Type

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600 V 3 Pin Transistor Socket BCR20KM-12L Medium Power Insulated Type

: Large Image : 600 V 3 Pin Transistor Socket BCR20KM-12L Medium Power Insulated Type

Product Details:

Place of Origin:	Malaysia
Brand Name:	RENESAS
Certification:	Original Factory Pack
Model Number:	BCR20KM-12L

Payment & Shipping Terms:

Minimum Order Quantity:	20
Price:	negotiate
Packaging Details:	please contact me for details
Delivery Time:	1
Payment Terms:	T/T, Western Union,Paypal
Supply Ability:	5000

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Detailed Product Description

Shipment:	DHL, FedeX, UPS, EMS Etc	Main Line:	IC Components, Transistor, Diode, Module,Capacitor Etc
Temperature:	-40 To+125 °C	VDRM:	600V
D/C:	1612	Package:	TO-220F
Highlight:	npn smd transistor , multi emitter transistor

600 V 3 Pin Transistor Socket BCR20KM-12L Medium Power Insulated Type

Transistor BCR20KM-12L Medium Power Use

Features

• IT (RMS) : 20 A

• VDRM : 600 V

• IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5

• Viso : 2000 V

• Insulated Type

• Planar Passivation Type

• UL Recognized : Yellow Card No. E223904 File No. E80271

Outline

Applications Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices

Maximum Ratings

Parameter

Symbol

Voltage class

Unit

Repetitive peak off-state voltageNote1

VDRM

600

Non-repetitive peak off-state voltageNote1

VDSM

720

Parameter	Symbol	Rating	Unit	Condition
RMS on-state current	IT (RMS)	20	A	Commercial frequency, sine full wave 360° conduction, Tc = 85°C
Surge on-state current	ITSM	200	A	60Hz sinewave 1 full cycle, peak value, non-repetitive
I 2 t for fusing	I2 t	167	A²S
Peak gate power dissipation	PG (AV)	5	W
Average gate power dissipation	PGM	0.5	W
Peak gate voltage	PG (AV)	2	W
Peak gate current	VGM	10	V
Junction temperature	IGM	– 40 to +125	°C
Storage temperature	Tj	– 40 to +125	°C
Mass	Tstg	2.9	G	Typical value
Isolation voltage	Viso	2000	V	Ta = 25°C, AC 1 minute, T1·T2·G terminal to case