Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
|
| Drain-source Voltage (VGS = 0): | 600 V | Gate-source Voltage: | ± 20 V |
|---|---|---|---|
| Drain Current (pulsed): | 14 A | Peak Diode Recovery Voltage Slope: | 3 V/ns |
| Storage Temperature: | -65 To 150 ℃ | Max. Operating Junction Temperature: | 150 ℃ |
| Highlight: | npn smd transistor,multi emitter transistor |
||
IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET
| TYPE | VDSS | RDS(on) | ID |
| IRFBC30 | 600 V | < 2.2 Ω | 3.6 A |
![IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET](/images/load_icon.gif){kind=icon}
TO-220
■ TYPICAL RDS(on) = 1.8 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHTM ΙΙ is the evolution of the first generation of MESH OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 600 | V |
| VDGR | Drain- gate Voltage (RGS = 20 kΩ) | 600 | V |
| VGS | Gate-source Voltage | ± 20 | V |
| ID | Drain Current (continuous) at Tc = 25 ℃ | 3.6 | A |
| ID | Drain Current (continuous) at Tc = 100 ℃ | 2.3 | A |
| IDM (•) | Drain Current (pulsed) | 14 | A |
| Ptot | Total Dissipation at Tc = 25 ℃ | 75 | W |
| Derating Factor | 0.6 | W/℃ | |
| dv/dt(1) | Peak Diode Recovery voltage slope | 3 | V/ns |
| Tstg | Storage Temperature | -65 to 150 | ℃ |
| Tj | Max. Operating Junction Temperature | 150 | ℃ |
(•) Pulse width limited by safe operating area
( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
TO-220 MECHANICAL DATA
High Power Rectifier Diode 1N4756A , Silicon Planar Zener Diodes
Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere
1N4742A Silicon Planar Zener Diodes for Stabilized Power Supply
Power Programmable IC Chips XC6SLX100-3FGG484C Spartan-6 Family Overview
128K Bytes Sound IC Chip Programming ATMEGA128-16AU 8 Bit Microcontroller
EMC Programmable IC Chips Compliant Slew Rate Limited EI , Timer IC Chip
SMD Power Mosfet Module L7812CV TO-220 Power Trans Electronic Compoents
2SD1594 3 Pin Transistor NEC NPN Power Transistor Switching High Speed
2N5459 Power Mosfet Transistor N-Channel To-92 Original Stock FSC
![China IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET supplier](/photo/pl14420750-irfbc30_dual_power_mosfet_power_mosfet_transistor_n_channel_600v_1_8_ohm_to_220_powermesh_ii_mosfet.jpg)