Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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Home ProductsMosfet Power Module

MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier

China MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier supplier

Large Image :  MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier

Product Details:

Place of Origin: Malaysia
Brand Name: MOTOROLA
Certification: Original Factory Pack
Model Number: MHL21336

Payment & Shipping Terms:

Minimum Order Quantity: 5pcs
Price: Negotiation
Packaging Details: please contact me for details
Delivery Time: 1 Day
Payment Terms: Western Union,PayPal, T/T
Supply Ability: 1200PCS
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Detailed Product Description
Features1: Third Order Intercept: 45 DBm Typ Features1: Third Order Intercept: 45 DBm Typ
Features2: Power Gain: 31 DB Typ (@ F = 2140 MHz) Features2: Power Gain: 31 DB Typ (@ F = 2140 MHz)
Features3: Input VSWR 1.5:1 Features3: Input VSWR 1.5:1
Features4: Excellent Phase Linearity And Group Delay Characteristics Features4: Excellent Phase Linearity And Group Delay Characteristics
Features5: Ideal For Feedforward Base Station Applications Features5: Ideal For Feedforward Base Station Applications
Features6: N Suffix Indicates Lead-Free Terminations Features6: N Suffix Indicates Lead-Free Terminations

MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier

 

 

 

3G Band RF Linear LDMOS Amplifier

 

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.

• Third Order Intercept: 45 dBm Typ

• Power Gain: 31 dB Typ (@ f = 2140 MHz)

• Input VSWR 1.5:1

 

Features

• Excellent Phase Linearity and Group Delay Characteristics

• Ideal for Feedforward Base Station Applications

• N Suffix Indicates Lead-Free Terminations

 

MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier

MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier

 

Rating Symbol Value Unit  
DC Supply Voltage VDD 30 Vdc  
RF Input Power Pin +5 dBm  
Storage Temperature Range Tstg - 40 to +100 °C  

 

 

MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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