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          Anterwell Technology Ltd.

 

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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

China IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer supplier

Large Image :  IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

Product Details:

Place of Origin: Malaysia
Brand Name: ANTERWELL
Certification: Original Factory Pack
Model Number: 2SK3797

Payment & Shipping Terms:

Minimum Order Quantity: 10
Price: negotiate
Packaging Details: please contact me for details
Delivery Time: 1
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 2500
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Detailed Product Description
Drain-source Voltage: 600V Drain-gate Voltage: 600V
Main Line: IC Components, Transistor, Diode, Module,Capacitor Etc Delivery Time: Stock Offer
Temperature: -50~150 °C Package: TO-220

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

 

 

 

2SK3797 Field Effect Transistor Silicon N-Channel MOS Type  IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

 

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)

• High forward transfer admittance: |Yfs| = 7.5 S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 600 V)

• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Maximum Ratings (Ta = 25°C)

 

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 600 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate-source voltage VGSS ±30 V

Drain current                DC

                                  Pulse (t = 1 ms)

ID 13 A
IDP 52
Drain power dissipation (Tc = 25°C) PD 50 W
Single pulse avalanche energy EAS 1033 mJ
Avalanche current AR 13 A
Repetitive avalanche energy EAR 5.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -50-150     °C

 

Thermal Characteristics

Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 2.5 w/ °C
Thermal resistance, channel to abinent Rth (ch-a) 62.5 w/ °C

 

Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.

 

IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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