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IRFP044N Power Mosfet Transistor complementary power mosfet

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IRFP044N Power Mosfet Transistor complementary power mosfet

: Large Image : IRFP044N Power Mosfet Transistor complementary power mosfet

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRFP044N

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7900pcs

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Detailed Product Description

Pulsed Drain Current:	180 A	Power Dissipation:	120 W
Linear Derating Factor:	0.77 W/°C	Gate-to-Source Voltage:	± 20 V
Single Pulse Avalanche Energy:	230 MJ	Avalanche Current:	28 A
High Light:	power mosfet ic , silicon power transistors

IRFP044N HEXFET® Power MOSFET

• Advanced Process Technology IRFP044N Power Mosfet Transistor complementary power mosfet

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D@ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	53	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	37	A
I_DM	Pulsed Drain Current	180	A
P_D@T_C = 25°C	Power Dissipation	120	W
	Linear Derating Factor	0.77	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy	230	mJ
I_AR	Avalanche Current	28	A
E_AR	Repetitive Avalanche Energy	12	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J, T_STG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C
	Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

IRFP044N Power Mosfet Transistor complementary power mosfet

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