Home Products Power Mosfet Transistor

2SC4541 Power Mosfet Transistor Power Amplifier Npn Epitaxial Type

All Products

Integrated Circuit Chip (632)

Programmable IC Chips (288)

Circuit Board Chips (274)

Rectifier Diode (507)

Power Mosfet Transistor (461)

3 Pin Transistor (233)

RJ45 Ethernet Jack (15)

Pressure Sensor IC (52)

Mosfet Power Module (69)

SMD Ferrite Bead (111)

SMD LED Diode (39)

SMD Resistors (28)

Electronic IC Chips (511)

Electronics Components (206)

Best Products

High Power Mosfet Transistors

RF Power Mosfet Transistors

NPN General Purpose Transistor

Good quality Programmable IC Chips for sales

We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

2SC4541 Power Mosfet Transistor Power Amplifier Npn Epitaxial Type

: Large Image : 2SC4541 Power Mosfet Transistor Power Amplifier Npn Epitaxial Type

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2SC4541

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	13000pcs

Contact Now

Detailed Product Description

Collector-base Voltage:	80 V	Collector-emitter Voltage:	50 V
Emitter-base Voltage:	6 V	Collector Current:	3 A
Base Current:	0.6 A	Collector Power Dissipation:	500 MW
Highlight:	power mosfet ic , silicon power transistors

2SC4541

Power Amplifier Applications

Power Switching Applications

• Low saturation voltage: V_{CE (sat)}= 0.5 V (max) (I_C = 1.5 A)

• High speed switching time: t_stg = 0.5 µs (typ.)

• Small flat package

• P_C = 1.0 to 2.0 W (mounted on a ceramic substrate)

• Complementary to 2SA1736

Maximum Ratings (Ta = 25°C)

Characteristics	Symbol	Rating	Unit
Collector-base voltage	V_CBO	80	V
Collector-emitter voltage	V_CEO	50	V
Emitter-base voltage	V_EBO	6	V
Collector current	I_C	3	A
Base current	I_B	0.6	A
Collector power dissipation	P_C	500	mW
Collector power dissipation	P_C(Note)	1000	mW
Junction temperature	Tj	150	°C
Storage temperature range	Tstg	−55 to 150	°C

Note: Mounted on a ceramic substrate (250 mm2 × 0.8 t)

2SC4541 Power Mosfet Transistor Power Amplifier Npn Epitaxial Type

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

PQ20VZ11	22989	SHARP	14+	TO-252-5
PRF947	9000	NXP	06+	SOT-323
PRG21BC4R7MM1RA	34000	MURATA	08+	SMD0805
PRTR5V0U2AX	80000	NXP	16+	SOT-143
PS1240P02BT	33000	TDK	13+	SMD
PS2621L-E3	8684	NEC	16+	SOP-6
PS2703-1-F3-A	36000	NEC	10+	SOP-4
PS2802-1-F3-A	5108	NEC	16+	SOP-4
PS2805C-1-F3-A	6468	RENESAS	16+	SOP-4
PS2805C-4-F3-A	11883	RENESAS	16+	SOP-16
PS2911-1-F3-A	8655	RENESAS	14+	SOP-4
PS8701-F3-AX	16094	RENESAS	15+	SOP-5
PSMN4R0-40YS	10059	NXP	16+	SOT669
PT2248	65000	PTC	16+	DIP-16
PT2314	99000	PTC	14+	SOP-28
PT4207ESOH	12071	POWTECH	11+	SOP-8
PTH08T210WAZT	958	TI	16+	DIP-14
PUMD3	152000	NXP	16+	SOT-363
PUMH10	21000	NXP	14+	SOT-363
PV0402AP	7660	I0R	15+	SOP-8
PVT312	6304	IOR	13+	DIP-6
PVT312L	5302	IOR	14+	SOP-6
PZT2222A	81000	FSC	13+	SOT-223
PZT2222AT1G	54000	ON	16+	SOT-223
PZTA42T1G	35000	ON	16+	SOT-223
PZTA92T1G	36000	ON	13+	SOT-223
Q13FC1350000400	38000	EPSON	13+	SMD
QFET-3000-TR1G	16165	AVAGO	16+	SOT-343
R1LP0408CSB-7LI	3865	RENESAS	16+	TSOP-32
R2A15120FA	5054	RENESAS	14+	QFP48