Home Products Power Mosfet Transistor

2SD669A High Power Mosfet Transistors Silicon NPN Power Transistors

All Products

Integrated Circuit Chip (632)

Programmable IC Chips (288)

Circuit Board Chips (274)

Rectifier Diode (507)

Power Mosfet Transistor (461)

3 Pin Transistor (233)

RJ45 Ethernet Jack (15)

Pressure Sensor IC (52)

Mosfet Power Module (69)

SMD Ferrite Bead (111)

SMD LED Diode (39)

SMD Resistors (28)

Electronic IC Chips (511)

Electronics Components (206)

Best Products

High Power Mosfet Transistors

RF Power Mosfet Transistors

NPN General Purpose Transistor

Good quality Programmable IC Chips for sales

We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

2SD669A High Power Mosfet Transistors Silicon NPN Power Transistors

: Large Image : 2SD669A High Power Mosfet Transistors Silicon NPN Power Transistors

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2SD669A

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7600pcs

Contact Now

Detailed Product Description

Collector-base Voltage:	180 V	Collector-emitter Voltage:	160 V
Emitter-base Voltage:	5 V	Collector Current (DC):	1.5 A
Collector Current-peak:	3 A	Junction Temperature:	150 ℃
High Light:	power mosfet ic , silicon power transistors

Silicon NPN Power Transistors 2SD669 2SD669A

DESCRIPTION

·With TO-126 package

·Complement to type 2SB649/649A

·High breakdown voltage V_CEO:120/160V

·High current 1.5A

·Low saturation voltage,excellent h_FE linearity

APPLICATIONS

·For low-frequency power amplifier applications

Absolute maximum ratings(Ta=25℃)

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	2SD669	Open emitter	180	V
V_CBO	Collector-base voltage	2SD669A	Open emitter	180	V
V_CEO	Collector-emitter voltage	2SD669	Open base	120	V
V_CEO	Collector-emitter voltage	2SD669A	Open base	160	V
V_EBO	Emitter-base voltage		Open collector	5	V
I_C	Collector current (DC)			1.5	A
I_CM	Collector current-peak			3	A
P_D	Total power dissipation		Ta=25℃	1	W
P_D	Total power dissipation		T_C=25℃	20	W
Tj	Junction temperature			150	℃
Tstg	Storage temperature			-55~150	℃

PACKAGE OUTLINE

2SD669A High Power Mosfet Transistors Silicon NPN Power Transistors

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

TIL111M	12128	FAIRCHILD	16+	DIP-6
TGS813	821	FIGARO	16+	DIP-6
PS710A	11988	NEC	15+	DIP-6
S21MD4V	7520	SHARP	13+	DIP-6
STV2247H	18192	ST	14+	DIP-56
TDA9855	1904	PHILIPS	16+	DIP-52
SKBPC3516	14738	SEP	15+	DIP-5
ST16C550IP	7940	EXAR	16+	DIP-40
UPD765AC-2	2750	NEC	15+	DIP-40
SC26C92C1N	1454	NXP	16+	DIP-40
PS2501-1-A	25500	RENESAS	13+	DIP-4
RPI-441C1	12436	ROHM	16+	DIP-4
RPI-574	11358	ROHM	16+	DIP-4
RPI-579N1	17364	ROHM	08+	DIP-4
RPR-220	16400	ROHM	14+	DIP-4
RPR359F	15732	ROHM	10+	DIP-4
RPR-359F	4500	ROHM	16+	DIP-4
S1WBS80	17654	SANYO	11+	DIP-4
RS206	14768	SEP	16+	DIP-4
W08	81500	SEP	16+	DIP-4
UPD431000ACZ-70L	12540	NEC	16+	DIP-32
TDA4855	15174	PHILIPS	16+	DIP-32
TDA9160A	13684	PHILIPS	16+	DIP-32
ST-1MLBR2	6480	KODENSHI	13+	DIP-3
SL1021B090	4236	LITTELFUS	16+	DIP-3
RE200B	6368	NICERA	13+	DIP-3
RE200B-P	7904	NICERA	12+	DIP-3
SPLLL90-3	521	OSRAM	10+	DIP-3
RPM6938	36584	ROHM	06+	DIP-3
RPM6938-V4	5972	ROHM	16+	DIP-3

Tag:

mosfets irf3205,

power mosfet ic,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-23616356

Fax: 86-755-23617396

Other Products

MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

VEB: 5.0Vdc
IB: 2.0Adc
TJ: −65 to +150 °C
Tstg: −65 to +150 °C

1N4148 FAST SWITCHING DIODE power rectifier diode high voltage rectifier diode

Non-Repetitive Peak Reverse Voltage: 100 V
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage: 75V
RMS Reverse Voltage: 53V
Thermal Resistance, Junction to Ambient Air (Note 1): 300 K/W

1.5KE7.5CA 1500W Axial Lead Transient Voltage uppressors - 6.8V-440V high voltage

Peak power dissipation: 1500W
Steady state power dissipation: 6.5W
Peak forward surge current: 200A
Maximum instantaneours forward voltage: -55~+150℃

BTS134D Smart Low Side Power Switch electronic chip board

VDS: 42 V
Vbb(SC): 42V
VIN: -0.2 2) ... +10V
Tj: -40 ...+150 °C

TCMT4100 Optocoupler with Phototransistor Output general purpose mosfet

VR: 6V
Ptot: 250mW
Tstg: –40 to +100°C
Tsd: 235°C