Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Home ProductsPower Mosfet Transistor

RJH60F7ADPK Power Mosfet Transistor Silicon N Channel IGBT Transistor

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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RJH60F7ADPK Power Mosfet Transistor Silicon N Channel IGBT Transistor

China RJH60F7ADPK Power Mosfet Transistor Silicon N Channel IGBT Transistor supplier

Large Image :  RJH60F7ADPK Power Mosfet Transistor Silicon N Channel IGBT Transistor

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: RJH60F7ADPK

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8500pcs
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Detailed Product Description
Collector To Emitter Voltage: 600 V Gate To Emitter Voltage: ±30 V
Collector Peak Current: 180 A Collector To Emitter Diode Forward Peak Current: 100 A
Collector Dissipation: 328.9 W Junction Temperature: 150 °C
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power mosfet ic

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silicon power transistors

 

RJH60F7ADPK

Silicon N Channel IGBT High Speed Power Switching

 

Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology
  • High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C)

 

Absolute Maximum Ratings (Tc = 25°C)

Item Symbol Ratings Unit
Collector to emitter voltage VCES 600 V
Gate to emitter voltage VGES ±30 V
Collector current Tc = 25°C IC 90 A
Tc = 100°C IC 50 A
Collector peak current ic(peak) Note1 180 A
Collector to emitter diode forward peak current DF(peak) Note2 100 A
Collector dissipation PC 328.9 W
Junction to case thermal impedance (IGBT) θj-c 0.38 °C/W
Junction to case thermal impedance (Diode) θj-c 2.0 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. Pulse width limited by safe operating area.

           2. PW ≤ 5 μs, duty cycle ≤ 1%

 

Outline

RJH60F7ADPK Power Mosfet Transistor Silicon N Channel IGBT Transistor

 

 

 

Stock Offer (Hot Sell)

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PT2260-R4S 15836 PTC 16+ SOP-16
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PS2801-4-F3-A 24660 RENESAS 14+ SOP-16
PS2801C-4 12312 RENESAS 14+ SOP-16
PS2845 2183 RENESAS 16+ SOP-16
RT9206PS 11424 RICHTEK 15+ SOP-16
RT9206 28860 RTCHTEK 16+ SOP-16
SI3000-C-FSR 4640 SILICON 12+ SOP-16

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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