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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

: Large Image : RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

Product Details:

Place of Origin:	Original
Brand Name:	MITSUBISHI
Certification:	Original Factory Pack
Model Number:	RD06HVF1

Payment & Shipping Terms:

Minimum Order Quantity:	50pcs
Price:	negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

Contact Now

Detailed Product Description

Drain To Source Voltage:	50 V	Gate To Source Voltage:	+/- 20 V
Channel Dissipation:	27.8 W	Input Power:	0.6 W
Drain Current:	3 A
High Light:	multi emitter transistor , silicon power transistors

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION

RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

FEATURES High power gain:

Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz

APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets.

RoHS COMPLIANT

RD06HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking.

This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet

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