2SA1412 Power Mosfet Transistor SILICON POWER TRANSISTOR

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SILICON POWER TRANSISTOR 2SA1412-Z

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

DESCRIPTION

The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits.

FEATURES

• High Voltage: VCEO = −400 V

• High Speed: tf ≤ 0.7 μs

• Complement to 2SC3631-Z

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C)

Collector to base voltage                                V_CBO            −400 V

Collector to emitter voltage                             V_CEO            −400 V

Base to emitter voltage                                   V_EBO            −7 V

Collector current (DC)                                    I_C(DC)            −2.0 A

Collector current (pulse) ^{Note 1}                      I_C(pulse)         −4.0 A

Total power dissipation (TA = 25°C) ^{Note 2}     P_T                 2.0 W

Junction temperature                                      T_j                  150 °C

Storage temperature                                       T_stg             −55 to +150 °C

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

            2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm  

PACKAGE DRAWING (Unit: mm)