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FQB7N60S 600V N-Channel MOSFET high power mosfet transistors rf power mosfet transistors

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FQB7N60S 600V N-Channel MOSFET high power mosfet transistors rf power mosfet transistors

: Large Image : FQB7N60S 600V N-Channel MOSFET high power mosfet transistors rf power mosfet transistors

Product Details:

Place of Origin:	Original
Brand Name:	FAIRCHILD
Certification:	Original Factory Pack
Model Number:	FQB7N60S

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

Contact Now

Detailed Product Description

Drain-Source Voltage:	600 V	Drain Current:	7.4 A
Drain Current - Pulsed:	29.6 A	Gate-Source Voltage:	± 30 V
Single Pulsed Avalanche Energy (Note 2):	580 MJ
High Light:	power mosfet ic , multi emitter transistor

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FQB7N60S 600V N-Channel MOSFET high power mosfet transistors rf power mosfet transistors

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features

• 7.4A, 600V, RDS(on) = 1.0Ω @VGS = 10 V

• Low gate charge ( typical 29 nC)

• Low Crss ( typical 16 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol	Parameter	FQB7N60 / FQI7N60	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	7.4 4.7	A
I_DM	Drain Current - Pulsed	29.6	A
V_GSS	VGSS Gate-Source Voltage	± 30	V