Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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2SC2240-GR audio power mosfet Power Mosfet Transistor Silicon NPN Epitaxial Type (PCT process)

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

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I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

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Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

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We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

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2SC2240-GR audio power mosfet Power Mosfet Transistor Silicon NPN Epitaxial Type (PCT process)

China 2SC2240-GR audio power mosfet Power Mosfet Transistor Silicon NPN Epitaxial Type (PCT process) supplier

Large Image :  2SC2240-GR audio power mosfet Power Mosfet Transistor Silicon NPN Epitaxial Type (PCT process)

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: 2SC2240-GR

Payment & Shipping Terms:

Minimum Order Quantity: 20pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8700pcs
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Detailed Product Description
Collector-base Voltage: 120 V Collector-emitter Voltage: 120 V
Emitter-base Voltage: 5 V Collector Current: 100 MA
Collector Power Dissipation: 300 MW Storage Temperature Range: −55~125 °C
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multi emitter transistor

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silicon power transistors

 

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC2240

 

Low Noise Audio Amplifier Applications

 

The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplifiers.

 

• Low noise : NF = 4dB (typ.) RG = 100 Ω, VCE = 6 V, IC = 100 μA, f = 1 kHz

                   : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = 6 V, IC = 100 μA, f = 1 kHz

• Low pulse noise: Low 1/f noise

• High DC current gain: hFE = 200~700

• High breakdown voltage: VCEO = 120 V

 

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 120 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Base current IB 20 mA
Collector power dissipation PC 300 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

 

2SC2240-GR audio power mosfet Power Mosfet Transistor Silicon NPN Epitaxial Type (PCT process)

  Weight: 0.21 g (typ.)

 

2SC2240-GR audio power mosfet Power Mosfet Transistor Silicon NPN Epitaxial Type (PCT process)2SC2240-GR audio power mosfet Power Mosfet Transistor Silicon NPN Epitaxial Type (PCT process)2SC2240-GR audio power mosfet Power Mosfet Transistor Silicon NPN Epitaxial Type (PCT process)

 

 

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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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