Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

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SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

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I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

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Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

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SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

China SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET supplier

Large Image :  SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: SI4435DY

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8600pcs
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Detailed Product Description
Drain-Source Voltage: –30 V Gate-Source Voltage: ±20 V
Drain Current – Continuous: –8.8 A Power Dissipation For Single Operation: 2.5 W
Operating And Storage Junction Temperature Range: –55 To +175 °C Thermal Resistance, Junction-to-Case: 25 °C/W
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SI4435DY

30V P-Channel PowerTrench MOSFET

 

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

 

Applications

· Power management

· Load switch

· Battery protection

 

Features

· –8.8 A, –30 V     RDS(ON) = 20 mW @ VGS = –10 V

                             RDS(ON) = 35 mW @ VGS = –4.5 V

· Low gate charge (17nC typical)

· Fast switching speed

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability

 

Absolute Maximum Ratings TA=25℃ unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
ID

Drain Current – Continuous                      (Note 1a)

                       – Pulsed

–8.8 A
–50
PD

Power Dissipation for Single Operation     (Note 1a)

                                                                  (Note 1b)

                                                                  (Note 1c)

2.5

W

1.2
1
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C

 

Thermal Characteristics

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

 

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
SI4435DY SI4435DY 13’’ 12mm 2500 units

 

SI4435DY trench power mosfet Power Mosfet Transistor 30V P-Channel PowerTrench MOSFET

 

 

 

 

 

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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