Q6012LH5 power mosfet ic Triacs Sensitive Gate Power Mosfet Transistor Alternistor Triacs

Alternistor Triacs (6 A to 40 A)

General Description

Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors. Teccor's alternistor is specifically designed for applications that switch highly inductive loads. A special chip offers the same performance as two thyristors (SCRs) wired inverse parallel (back-to-back), providing better turn-off behavior than a standard triac. An alternistor may be triggered from a blocking to conduction state for either polarity of applied AC voltage with operating modes in Quadrants I, II, and III.

This new chip construction provides two electrically separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device.

All alternistors have glass-passivated junctions to ensure longterm reliability and parameter stability. Teccor's glass-passivated junctions offer a reliable barrier against junction contamination.

Teccor's TO-218X package is designed for heavy, steady powerhandling capability. It features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated packages have a standard isolation voltage rating of 2500 V rms.

Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for further information.

Features

• High surge current capability

• Glass-passivated junctions

• 2500 V ac isolation for L, J, and K Packages

• High commutating dv/dt

• High static dv/dt

Test Conditions

di/dt — Maximum rate-of-change of on-state current

dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open

dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized

I ²t — RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing

I_DRM — Peak off-state current gate open; V_DRM = maximum rated value

I_GT — DC gate trigger current in specific operating quadrants; V_D = 12 V dc

I_GTM — Peak gate trigger current

I_H — Holding current (DC); gate open

I_T(RMS) — RMS on-state current conduction angle of 360°

I_TSM — Peak one-cycle surge

P_G(AV) — Average gate power dissipation

P_GM — Peak gate power dissipation; I_GT≦ I_GTM

t_gt — Gate controlled turn-on time; I_GT = 300 mA with 0.1 µs rise time

V_DRM — Repetitive peak blocking voltage

V_GT — DC gate trigger voltage; V_D = 12 V dc

V_TM — Peak on-state voltage at maximum rated RMS current