2SA1298 Low Frequency Power Amplifier Application Power Switching Applications integrated semiconductor

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)   2SA1298

Low Frequency Power Amplifier

Application Power Switching Applications

• High DC current gain: hFE = 100~320

• Low saturation voltage:

VCE (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA)

• Suitable for driver stage of small motor

• Complementary to 2SC3265

• Small package

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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