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TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

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TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

: Large Image : TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode

Product Details:

Place of Origin:	Original
Brand Name:	VISHAY
Certification:	Original Factory Pack
Model Number:	TSML1020

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

Contact Now

Detailed Product Description

VR:	5 V	IF:	100 MA
IFM:	200 MA	IFSM:	1.0 A
PV:	190 MW
High Light:	diode rectifier circuit , bridge rectifier circuit

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

TSML1020 High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Rectifier Diode Features
• Outstanding high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 12°
• Peak wavelength λp = 950 nm
• High reliability
• Matched Phototransistor series: TEMT1000
• Versatile terminal configurations
• Lead-free component

Description
TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package.

This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

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