Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

High Quality, Reasonable Price, Fast Delivery.

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Home ProductsPower Mosfet Transistor

STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

China STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA supplier

Large Image :  STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

Product Details:

Place of Origin: original factory
Brand Name: Anterwell
Certification: new & original
Model Number: STD4NK60ZT4

Payment & Shipping Terms:

Minimum Order Quantity: 10pcs
Price: Negotiate
Packaging Details: Please contact me for details
Delivery Time: 1 day
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8700pcs
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Detailed Product Description
Drain-source Voltage (VGS = 0): 600 V Drain-gate Voltage (RGS = 20 KΩ): 600 V
Gate- Source Voltage: ± 30 V Gate Source ESD(HBM-C=100pF, R=1.5KΩ): 3000 V
Peak Diode Recovery Voltage Slope: 4.5 V/ns Operating Junction Temperature: -55 To 150 °C
High Light:

power mosfet ic

,

multi emitter transistor

 
STP4NK60Z - STP4NK60ZFP
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
 
N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D2PAK
Zener-Protected SuperMESHTMPower MOSFET
 
■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
 
DESCRIPTION
The SuperMESHTM series is obtained through an extreme optimization of ST’s well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
 
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING
 
ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
STP4NK60Z STB4NK60ZSTP4NK60ZFPSTD4NK60Z STD4NK60Z-1
VDSDrain-source Voltage (VGS = 0)600V
VDGRDrain-gate Voltage (RGS = 20 kΩ)600V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C44 (*)4A
IDDrain Current (continuous) at TC = 100°C2.52.5 (*)2.5A
IDM (l )Drain Current (pulsed)1616 (*)16A
PTOTTotal Dissipation at TC = 25°C702570W
 Derating Factor0.560.20.56W/°C
VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)3000V
dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
VISOInsulation Withstand Voltage (DC)-2500-V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

°C

(l ) Pulse width limited by safe operating area
(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
 
STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AASTD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA
 
 
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Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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