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Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

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Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

: Large Image : Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2SD1290

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8000

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Detailed Product Description

Collector-base Voltage:

1500V

Emitter-base Voltage:

Collector Power Dissipation:

50W

Junction Temperature:

130℃

Highlight:

power mosfet ic

multi emitter transistor

Silicon High voltage general purpose npn transistor 2SD1290 Built in damper diode

DESCRIPTION

Silicon High voltage general purpose npn transistor Built in damper diode , 2SD1290

·With TO-3PN package

·Built-in damper diode

·High voltage ,high reliability

·Wide area of safe operation

APPLICATIONS

·For color TV horizontal deflection

output applications

**PINNING**
PIN	DESCRIPTION
1	Base
2	Collector;connected to mounting base
3	Emitter

**Absolute maximum ratings (Ta=25℃)**
SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
V_CBO	Collector-base voltage	Open emitter	1500	V
V_EBO	Emitter-base voltage	Open collector	5	V
I_C	Collector current (DC)		3	A
I_CM	Collector current (Pulse)		10	A
P_C	Collector power dissipation	TC=25℃	50	W
T_j	Junction temperature		130	℃
T_stg	Storage temperature		-55~130	℃

**CHARACTERISTICS** Tj=25℃ unless otherwise specified
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V_(BR)EBO	Emitter-base breakdown voltage	I_E=500mA; I_C=0	5			V
V_CEsat	Collector-emitter saturation voltage	I_C=2A; I_B=0.75A			5.0	V
V_BEsat	Base-emitter saturation voltage	I_C=2A; I_B=0.75A			1.5	V
I_CBO	Collector cut-off current	V_CB=750V; I_E=0 V_CB=1500V; I_E=0			50 1	μA mA
h_FE	DC current gain	I_C=2A ; V_CE=10V	3		8
t_s	Storage time	I_C=2A I_Leak=0.75A,L_B=5μH	3		7	μs
t_f	Fall time	I_C=2A I_Leak=0.75A,L_B=5μH			1	μs
V_F	Diode forward voltage	I_F=-4A,I_B=0			2.2	V