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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

: Large Image : Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Product Details:

Place of Origin:	China
Certification:	Original Factory Pack
Model Number:	BSP315

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T , Western Union,PayPal
Supply Ability:	6800PCS

Contact Now

Detailed Product Description

Features:	P Channel	Main Line:	Ic,module,transistor,diodes,capacitor,resistor Etc
Features2:	Enhancement Mode	Features3:	• Logic Level
Features4:	VGS(th) = -0.8...-2.0 V	Package:	SOT-23
High Light:	power mosfet ic , silicon power transistors

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

• P channel

• Enhancement mode Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

• Logic Level

• VGS(th) = -0.8...-2.0 V

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T

Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

Maximum Ratings

Parameter	Symbol	Values	Unit
Drain source voltage	V_DS	-50	V
Drain-gate voltage RGS = 20 kΩ	V_DGR	-50
Gate source voltage	V_GS	± 20
Continuous drain current TA = 39 °C	I_D	-1.1	A
DC drain current, pulsed TA = 25 °C	I_Dpuls	-4.4	A
Power dissipation TA = 25 °C	P_tot	1.8	W

Tag:

mosfets irf3205,

power mosfet ic,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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