BC847A Dual Power Mosfet Transistor NPN Silicon Electronics Components

BC847A Dual Power Mosfet Transistor NPN Silicon Electronics Components

BC847ALT1 Series

General Purpose Transistors NPN Silicon 

FEATURES

• Pb−Free Packages are Available

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: >4000 V ESD Rating

                      − Machine Model: >400 V

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 VCEO 65 45 30 Vdc

Collector−Base Voltage BC846 BC847, BC850 BC848, BC849 VCBO 80 50 30 Vdc

Emitter−Base Voltage BC846 BC847, BC850 BC848, BC849 VEBO 6.0 6.0 5.0 Vdc

Collector Current − Continuous IC 100 mAdc

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C

Thermal Resistance, Junction−to−Ambient (Note 1) RJA 556 °C/W

Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C

Thermal Resistance, Junction−to−Ambient (Note 2) RJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

1. FR−5 = 1.0
0.75
0.062 in.

2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.

Marking