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|Gate-Source Voltage:||±12 V||Drain-Source Voltage:||30V|
|Temperature Range:||-55 To 150 °C||Temperature Range:||-55 To 150 °C|
|Power Dissipation:||0.9 To 1.4W||Power Dissipation:||0.9 To 1.4W|
|Continuous Drain Current:||4.7 To 5.7 A||Package:||SOT-23 (TO-236)|
|Continuous Drain Current:||4.7 To 5.7 A|
power mosfet ic,
silicon power transistors
Field Effect Transistor AO3400A N-Channel Enhancement Mode 30V
- Channel Enhancement Mode Field Effect Transistor
|The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).||
VDS (V) = 30V
ID = 5.7A (VGS = 10V)
RDS(ON) < 26.5mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 48mΩ (VGS = 2.5V)
|Maximum Junction-to-Ambient A||t ≤ 10s||RθJA||
|Maximum Junction-to-Ambient A||Steady-State||100||125||°C/W|
|Maximum Junction-to-Lead C||Steady-State||RθJL||63||80||°C/W|
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.
F: The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: Apr. 2007
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