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N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

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N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

: Large Image : N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

Product Details:

Place of Origin:	Malaysia
Brand Name:	FSC
Certification:	Original Factory Pack
Model Number:	FDS6676AS

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T in advance or others
Supply Ability:	1000PCS

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Detailed Product Description

Drain-Source Voltage:	30V	Main Line::	Ic,module,transistor,diodes,capacitor,resistor Etc
Gate-Source Voltage:	±20V	Temperature:	-50-+150°C
Factory Pack:	2500pcs/Reel	Package:	SOP-8
High Light:	electronic chip board , electronic components ic

N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

30V N-Channel PowerTrench FDS6676AS Electronic Components Original Stock

General Description

The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous

DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Applications

• DC/DC converter

• Low side notebook

Features

• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (45nC typical)

• High performance trench technology for extremely low RDS(ON) and fast switching

• High power and current handling capability

N Channel Powertrench Mosfet FDS6676AS Intregrated Circuit Computer Chip Board

Absolute Maximum Ratings TA=25o C unless otherwise noted

Symbol	Parameter	Rating	Unit
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage	±20	V
ID	Drain Current – Continuous (Note 1a) – Pulsed	14.5	A
ID	Drain Current – Continuous (Note 1a) – Pulsed	50	A
PD	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	2.5	W
		1.5
		1
TJ, TSTG	Operating and Storage Junction Temperature Range	–55 to +150	°C