Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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ID,pulse: | 72.9A | EAR: | 1.5mJ |
---|---|---|---|
Dv /dt: | 50V/ns | V GS: | ±30V |
Ptot: | 240W | T J , T Stg: | - 55 ... 150°C |
24N60C3
CoolMOS Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Product Summary
V DS @ T j,max | 650 | V |
R DS(on),max | 0.16 | Ω |
I D | 24.3 | A |
Maximum ratings, at T j =25 °C, unless otherwise specified
Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | I D | T C=25 °C | 24.3 | A |
T C=100 °C | 15.4 | |||
Pulsed drain current1) | I D,pulse | T C=25 °C | 72.9 | |
Avalanche energy, single pulse | EAS | ID=12.1 A, V DD=50 V | 780 | mJ |
Avalanche energy, repetitive t AR 1),2) | EAR | I D=24.3 A, V DD=50 V | 1.5 | |
Avalanche current, repetitive t AR 1) | I AR | 24.3 | A | |
Drain source voltage slope | dv /dt | I D=24.3 A, V DS=480 V, T j =125 °C |
50 | V/ns |
Gate source voltage | V GS | static | ±20 | V |
V GS | AC (f >1 Hz) | ±30 | ||
Power dissipation | Ptot | T C=25 °C | 240 | W |
Operating and storage temperature | T j , T stg | -55 ... 150 | °C |
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