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TZM5239B-GS08 Rectifier Diode Silicon Zener Diodes popular integrated circuits

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TZM5239B-GS08 Rectifier Diode Silicon Zener Diodes popular integrated circuits

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Product Details:

Place of Origin:	Original
Brand Name:	VISHAY
Certification:	Original Factory Pack
Model Number:	TZM5239B-GS08

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

Power Dissipation:	500mW	Junction Temperature:	175°C
Storage Temperature Range:	- 65...+175°C	Forward Voltage:	1.1V
High Light:	bridge rectifier circuit , signal schottky diode

Power Dissipation:

500mW

Junction Temperature:

175°C

Storage Temperature Range:

- 65...+175°C

Forward Voltage:

1.1V

High Light:

bridge rectifier circuit

signal schottky diode

TZM5239B-GS08 Silicon Zener Diodes

TZM5239B-GS08 Rectifier Diode Silicon Zener Diodes popular integrated circuits Features
•Very sharp reverse characteristic
•Very high stability
•Electrical data identical with the devices
1N5221B...1N5267B
•Low reverse current level
•VZ–tolerance ± 5%

Applications
Voltage stabilization

Absolute Maximum Ratings

Tj = 25C

Parameter	Test Conditions	Symbol	Value	Unit
Power dissipation	RthJA<300K/W, Tamb=25C	PV	500	mW
Z–current		IZ	PV/VZ	mA
Junction temperature		Tj	175	°C
Storage temperature range		Tstg	–65...+175	°C

Maximum Thermal Resistance

Tj = 25C

Parameter	Test Conditions	Symbol	Value	Unit
Junction ambient	on PC board 50mmx50mmx1.6mm	RthJA	500	K/W

Electrical Characteristics

Tj = 25C

Parameter	Test Conditions	Symbol	Max	Unit
Forward voltage	IF=200mA	VF	1.1	V

TZM5239B-GS08 Rectifier Diode Silicon Zener Diodes popular integrated circuits

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