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SIHG20N50C Power Mosfet Transistor high voltage power mosfet

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SIHG20N50C Power Mosfet Transistor high voltage power mosfet

: Large Image : SIHG20N50C Power Mosfet Transistor high voltage power mosfet

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	SIHG20N50C

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8000pcs

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Detailed Product Description

Drain-Source Voltage:	500 V	Gate-Source Voltage:	± 30 V
Pulsed Drain Current:	80 A	Linear Derating Factor:	1.8 W/°C
Single Pulse Avalanche Energy:	361 MJ	Maximum Power Dissipation:	250 W
Highlight:	power mosfet ic , multi emitter transistor

SiHG20N50C

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Low Figure-of-Merit R_on x Q_g

• 100 % Avalanche Tested

• High Peak Current Capability

• dV/dt Ruggedness

• Improved T_rr/Q_rr

• Improved Gate Charge

• High Power Dissipations Capability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

V_DS (V) at T_J max.	560
R_DS(on) (Ω)	V_GS = 10 V	0.270
Q_g (Max.) (nC)	76
Q_gs (nC)	21
Q_gd (nC)	34
Configuration	Single

ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			V_DS	500	V
Gate-Source Voltage			V_GS	± 30	V
Continuous Drain Current (T_J = 150 °C) ^e	V_GS at 10 V	T_C = 25 °C	I_D	20	A
Continuous Drain Current (T_J = 150 °C) ^e	V_GS at 10 V	T_C = 100 °C	I_D	11	A
Pulsed Drain Current ^a			I_DM	80	A
Linear Derating Factor				1.8	W/°C
Single Pulse Avalanche Energy ^b			E_AS	361	mJ
Maximum Power Dissipation			P_D	250	W
Peak Diode Recovery dV/dt ^c			dV/dt	5	V/ns
Operating Junction and Storage Temperature Range			T_J, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s		300 ^d	°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD = 50 V, starting T_J = 25 °C, L = 2.5 mH, R_g = 25 Ω, I_AS = 17 A.

c. I_SD ≤ 18 A, dI/dt ≤ 380 A/μs, V_DD ≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. Limited by maximum junction temperature.

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