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FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

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FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

: Large Image : FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	FDN337N

Payment & Shipping Terms:

Minimum Order Quantity:	10PCS
Price:	Negotiate
Packaging Details:	Please contact me for details
Payment Terms:	T/T, Western Union, MoneyGram Paypal
Supply Ability:	3000pcs/week

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Detailed Product Description

Drain-Source Voltage:	30V	Gate-Source Voltage - Continuous:	±8V
Operating And Storage Temperature Range:	-55 To 150 °C	Packaging:	SOT-23
Weight:	30 Mg	Factory Packing Quantity:	3000
Highlight:	power mosfet ic , silicon power transistors

FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features

2.2 A, 30 V, RDS(ON) = 0.065 W @ VGS = 4.5 V RDS(ON) = 0.082 W @ VGS = 2.5 V.

Industry standard outline SOT-23 surface mount package using proprietary

SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON).

Exceptional on-resistance and maximum DC current capability.

Symbol	Parameter	FDN337N	Units
VDSS	Drain-Source Voltage	30	V
VGSS	Gate-Source Voltage - Continuous	±8	V
ID	Drain/Output Current - Continuous - Pulsed	2.2 10	A
PD	Maximum Power Dissipation (Note 1a) (Note 1b)	0.5 0.46	A
TJ ,TSTG	Operating and Storage Temperature Range	-55 to 150	°C
THERMAL CHARACTERISTICS
RqJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	250	°C/W
RqJC	Thermal Resistance, Junction-to-Case (Note 1)	75	°C/W

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