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HUF75645P3 power mosfet module N-Channel , UltraFET Power MOSFETs

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HUF75645P3 power mosfet module N-Channel , UltraFET Power MOSFETs

: Large Image : HUF75645P3 power mosfet module N-Channel , UltraFET Power MOSFETs

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	HUF75645P3

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	9000pcs

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Detailed Product Description

Drain To Source Voltage:	100 V	Drain To Gate Voltage:	100 V
Gate To Source Voltage:	±20 V	Power Dissipation:	310 W
Operating And Storage Temperature:	-55 To 175 ℃	Package:	TO-220AB
Highlight:	power mosfet ic , silicon power transistors

HUF75645P3, HUF75645S3S

75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.014Ω, VGS = 10V

• Simulation Models

- Temperature Compensated PSPICE® and SABER© Electrical Models

- Spice and Saber Thermal Impedance Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

HUF75645P3 power mosfet module N-Channel , UltraFET Power MOSFETs

Absolute Maximum Ratings T_C = 25℃, Unless Otherwise Specified

PARAMETER	SYMBOL	HUF75645P3, HUF75645S3S	UNITS
Drain to Source Voltage (Note 1)	V_DSS	100	V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1)	V_DGR	100	V
Gate to Source Voltage	V_GS	±20	V
Drain Current Continuous (T_C= 25℃, V_GS = 10V) (Figure 2) Continuous (T_C= 100℃, V_GS = 10V) (Figure 2)	I_D I_D	75 65	A A
Power Dissipation Derate Above 25℃	P_D	310 2.07	W W/℃
Operating and Storage Temperature	T_J, T_STG	-55 to 175	℃
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	T_L T_pkg	300 260	℃ ℃

NOTES: 1. TJ = 25℃ to 150℃.

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