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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

: Large Image : Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Product Details:

Place of Origin:	China
Brand Name:	ISC
Certification:	Original Factory Pack
Model Number:	BT136-600E

Payment & Shipping Terms:

Minimum Order Quantity:	4000pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal,
Supply Ability:	240000PCS

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Detailed Product Description

Description:	Glass Passivated, Sensitive Gate Triacs	Repetitive Peak Off-state Voltage:	600 V
Average On-state Current:	4 A	Non-repetitive Peak On-state Current:	25 A
Storage Temperature:	-45～150 ℃	Package:	TO-220AB
Highlight:	multi emitter transistor , silicon power transistors

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Features

·With TO-220AB package

·Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

QUICK REFERENCE DATA

SYMBOL	PARAMETER	VALUE	UNIT
VDRM	Repetitive peak off-state voltage	600	V
VRRM	Repetitive peak off-state voltage	600	V
IT(AV)	Average on-state current	4	A
ITSM	Non-repetitive peak on-state current	25	A
Tstg	Storage temperature	-45～150