Anterwell Technology Ltd.

          Anterwell Technology Ltd.

 

Large Original stock of IC Electronics Components, Transistors, Diodes etc.

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Schottky Barrier Diode NXP Electronics Diodes IC Chip BAS85

Good quality Programmable IC Chips for sales
Good quality Programmable IC Chips for sales
We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

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Schottky Barrier Diode NXP Electronics Diodes IC Chip BAS85

China Schottky Barrier Diode NXP Electronics Diodes IC Chip BAS85 supplier

Large Image :  Schottky Barrier Diode NXP Electronics Diodes IC Chip BAS85

Product Details:

Place of Origin: China
Brand Name: NXP
Certification: Original Factory Pack
Model Number: BAS85

Payment & Shipping Terms:

Minimum Order Quantity: 100pcs
Price: Negotiation
Packaging Details: please contact me for details
Delivery Time: 1 Day
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 6200PCS
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Detailed Product Description
Package: 2500pcs/Reel Main Line:: Ic,module,transistor,diodes,capacitor,resistor Etc
Continuous Reverse Voltage: 30 V Continuous Forward Current: 200 MA
Average Forward Current: 200 MA Storage Temperature: −65 +150 ° °C

Schottky Barrier Diode NXP Electronics Diodes IC Chip BAS85

 

 

BAS85 Schottky barrier diode

 

FEATURES

 

• Low forward voltage

• High breakdown voltage

• Guard ring protected

• Hermetically-sealed small SMD package.

 

DESCRIPTION

Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering.

 

APPLICATIONS

• Ultra high-speed switching  

• Voltage clamping

• Protection circuits

• Blocking diodes.

 

SYMBOL PARAMETER CONDITIONS

MIN. MAX. UNIT VR continuous reverse voltage − 30 V

IF continuous forward current − 200 mA

IF(AV) average forward current VRWM = 25 V; a = 1.57; δ = 0.5;

note 1; Fig.2 − 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 300 mA I

FSM non-repetitive peak forward current tp = 10 ms − 5 A

Tstg storage temperature −65 +150 °C

Tj junction temperature − 125 °C

Tamb operating ambient temperature −65 +125 °C

 

SYMBOL PARAMETER CONDITIONS MAX UNIT
VF Forward Voltage

  IF=0.1mA

IF=1mA

IF=10mA

IF=30mA

IF=100mA

240

320

400

500

800

mV

mV

mV

mV

mV

IR   Vr=25V   2.3 uA
Cd diode capacitance f=1 MHz Vr=1V  10 pF

Schottky Barrier Diode NXP Electronics Diodes IC Chip BAS85

Contact Details
Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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